Firstly, the trichlorosilane method adds dry silicon powder to the synthesis furnace and undergoes chlorination reaction with the introduced dry hydrogen chloride gas in the presence of cuprous chloride catalyst at {{0}} degree . The reaction gas is separated by cyclone to remove impurities, and then the gaseous trichlorosilane is condensed into a liquid using calcium chloride frozen salt water. It is distilled and condensed in a crude distillation tower to remove high boiling and low boiling substances, and then distilled and condensed in a distillation tower to obtain a refined trichlorosilane liquid. The purity should reach 7 or more "9", the impurity content should be less than 1 × 10-7, and the boron requirement should be below 0.5 × 10-9. The purified trichlorosilane is sent into a stainless steel reduction furnace, where ultrapure hydrogen gas is used as a reducing agent to reduce it to silicon at 1050-1100 degree . The silicon core rod is used as a carrier to deposit polycrystalline silicon products.

Secondly, mix silica with approximately 95% SiO2 content and coke with low ash content, heat to around 1900 degree for reduction. The purity of silicon produced by this method is 97%~98%, which is called metallic silicon. After melting the metallic silicon, it undergoes recrystallization and impurities are removed with acid to obtain metallic silicon with a purity of 99.7%~99.8%. To make it into semiconductor silicon, it is necessary to convert it into a liquid or gas form that is easy to purify, and then obtain polycrystalline silicon through distillation and decomposition processes. To obtain high-purity silicon, further purification treatment is required.

Thirdly, mix silica with approximately 95% SiO2 content and coke with low ash content, and use a 1000-3000kVA open arc furnace to heat to around 1900 degree for reduction.